MOSFET N-Chan 650V 8.5 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8.5 A | ||
Resistance Drain-Source RDS (on) : | 0.93 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current VGS @ 10V |
8.5 |
A |
ID @ TC =100°C |
Continuous Drain Current VGS @ 10V |
5.4 | |
IDM |
Pulsed Drain Current |
21 | |
PD @ TC = 25°C |
Max. Power Dissipation |
167 |
W |
Linear Derating Factor |
1.3 |
W/ | |
VGS |
Gate-to-Source Voltage |
30 |
V |
dV/dt |
Peak Diode Recovery dv/dt |
2.8 |
V/ns |
TJ |
Operating Junction |
-55 to 150 |
|
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |