IRFB9N65APBF

MOSFET N-Chan 650V 8.5 Amp

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SeekIC No. : 00148376 Detail

IRFB9N65APBF: MOSFET N-Chan 650V 8.5 Amp

floor Price/Ceiling Price

US $ 1.06~1.72 / Piece | Get Latest Price
Part Number:
IRFB9N65APBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.72
  • $1.38
  • $1.25
  • $1.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 0.93 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 0.93 Ohms


Features:

· Low Gate Charge Qg results in Simple Drive Requirement
· Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
· Fully Characterized Capacitance and Avalanche Voltage and Current



Application

· Switch Mode Power Supply (SMPS)
· Uninterruptible Power Supply
· High Speed Power Switching
· Lead-Free



Pinout

  Connection Diagram


Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current VGS @ 10V
8.5
A
ID @  TC =100°C
Continuous Drain Current VGS @ 10V
5.4
IDM
Pulsed Drain Current
21
PD @ TC = 25°C
Max. Power Dissipation
167
W
Linear Derating Factor
1.3
W/
VGS
Gate-to-Source Voltage
30
V
dV/dt
Peak Diode Recovery dv/dt
2.8
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)



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