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IRFB9N65A

MOSFET N-Chan 650V 8.5 Amp

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SeekIC No. : 00158940 Detail

IRFB9N65A: MOSFET N-Chan 650V 8.5 Amp

IRFB9N65A Data Sheet

floor Price/Ceiling Price

US $ 1.89~2.02 / Piece | Get Latest Price
Part Number:
IRFB9N65A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~725
  • 725~1000
  • 1000~2000
  • Unit Price
  • $2.02
  • $1.94
  • $1.89
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 0.92 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 0.92 Ohms


Features:

 Low Gate Charge Qg results in Simple Drive Requirement
 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
 Fully Characterized Capacitance and Avalanche Voltage and Current


Application

 Switch Mode Power Supply (SMPS)
 Uninterruptible Power Supply
High Speed Power Switching


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.5 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.4
IDM Pulsed Drain Current 21
PD @TC = 25°C Power Dissipation 167 w
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 2.8 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)



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