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IRFB9N60APBF

MOSFET N-Chan 600V 9.2 Amp

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SeekIC No. : 00148864 Detail

IRFB9N60APBF: MOSFET N-Chan 600V 9.2 Amp

IRFB9N60APBF Data Sheet

floor Price/Ceiling Price

US $ .97~1.51 / Piece | Get Latest Price
Part Number:
IRFB9N60APBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.51
  • $1.22
  • $1.09
  • $.97
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 750 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 750 mOhms


Application

Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
 Lead-Free


Specifications

 

 Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
9.2
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
5.8

 

IDM Pulsed Drain Current
37

 

PD @TC = 25°C C Power Dissipation
170
W

 

 Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
±30
V
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C

 

 Soldering Temperature, for 10 seconds
300 (1.6mm from case )

 

  Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)



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