MOSFET N-CH 150V 60A TO-220AB
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 60 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 42 | |
IDM | Pulsed Drain Current | 250 | |
PD @TA = 25°C | Power Dissipation | 2.4 | W |
PD @TC = 25°C | Power Dissipation | 330 | |
Linear Derating Factor | 2.2 | W/°C | |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 3.7 | V/ns |
TJ | Operating Junction and | -55 to + 175 | °C |
TSTG | Storage Temperature Range | ||
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Technical/Catalog Information | IRFB61N15D |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 36A, 10V |
Input Capacitance (Ciss) @ Vds | 3470pF @ 25V |
Power - Max | 2.4W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 140nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFB61N15D IRFB61N15D |