IRFB59N10

The features of IRFB59N10 are: (1)low gate-to-drain charge to reduce switching losses; (2)fully characterized capacitance including effective COSS to simplify design; (3)fully characterized avalanche voltage and current.

The following is about the absolute maximum ratings of IRFB59N10: (1)continuous drain current, VGS @ 10V: 59A; (2)continuous drain current, VGS @ 10V: 42A; (3)drain current-pulse: 236A; (4)power dissipation: 3.8W; (5)linear derating factor: 1.3W/; (6)operating junction and storage temperature range: -55 to +175.

The electrical characteristics of the IRFB59N10 are: (1)drain-source breakdown voltage: 100V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.11V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 0.025 max at VGS=10V, ID=35.4A; (4)gate thresholad voltage: 3.0V min and 5.5V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=30V; (6)gate-source reverse leakage: -100nA max at VGS=-30V; (7)drain-source leakage current: 25A min at VDS=1000V, VGS=0V.