MOSFET MOSFT 150V 60A 32mOhm 60nC
IRFB52N15DPBF: MOSFET MOSFT 150V 60A 32mOhm 60nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V |
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 60 A |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Parameter |
Max. |
Units | |
ID@ TC = 25 |
Continuous Drain Current VGS @ 10V |
51* |
A |
ID@ TC = 100 |
Continuous Drain Current VGS @ 10V |
36* | |
IDM |
Pulsed Drain Current |
240 | |
PD @ TA = 25 |
Power Dissipation |
3.8 |
W |
PD @ TC = 25 |
Power Dissipation |
230* | |
Linear Derating Factor |
1.5 |
W/ | |
VGS |
Gate-to-Source Voltage |
±30 |
V |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ |
Operating Junction |
-55 to + 175 |
|
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 seconds |
300 (1.6mm from case | ||
Mounting torque, 6-32 or M3 screw |
10 lbf.in (1.1N.m) |
N |
Technical/Catalog Information | IRFB52N15DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 51A |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 36A, 10V |
Input Capacitance (Ciss) @ Vds | 2770pF @ 25V |
Power - Max | 3.8W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 89nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB52N15DPBF IRFB52N15DPBF |