Features: ·Low Gate-to-Drain Charge to Reduce Switching Losses·Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)· Fully Characterized Avalanche Voltage and CurrentApplication·High frequency DC-DC convertersSpecifications Parameter Max...
IRFB52N15D: Features: ·Low Gate-to-Drain Charge to Reduce Switching Losses·Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)· Fully Characterized Avalanche Volt...
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Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
60 |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
43 | |
IDM |
Pulsed Drain Current |
240 | |
PD @TA = 25°C |
Power Dissipation |
3.8 |
W |
PD @TC = 25°C |
Power Dissipation |
320 | |
Linear Derating Factor |
2.1 |
W/°C | |
VGS |
Gate-to-Source Voltage |
± 30 |
V |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ |
Operating Junction and |
-55 to + 175 |
°C |
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |