IRFB52N15

The features of IRFB52N15 are: (1)low gate-to-drain charge to reduce switching losses; (2)fully characterized capacitance including effective COSS to simplify design; (3)fully characterized avalanche voltage and current.

The following is about the absolute maximum ratings of IRFB52N15: (1)continuous drain current, VGS @ 10V: 60A; (2)continuous drain current, VGS @ 10V: 43A; (3)drain current-pulse: 240A; (4)power dissipation: 3.8W; (5)linear derating factor: 2.1W/; (6)operating junction and storage temperature range: -55 to +175.

The electrical characteristics of the IRFB52N15 are: (1)drain-source breakdown voltage: 150V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.16V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 0.032 max at VGS=10V, ID=36A; (4)gate thresholad voltage: 3.0V min and 5.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=30V; (6)gate-source reverse leakage: -100nA max at VGS=-30V; (7)drain-source leakage current: 25A min at VDS=150V, VGS=0V.