MOSFET MOSFT 100V 73A 14mOhm 90nC Qg
IRFB4610PBF: MOSFET MOSFT 100V 73A 14mOhm 90nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 73 A |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
73 |
A |
ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
52 | |
IDM | Pulsed Drain Current |
290 | |
PD @TC= 25 | Maximum Power Dissipation |
190 |
W |
Linear Derating Factor |
1.3 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
dV/dt | Repetitive Avalanche Energy | 7.6 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
Technical/Catalog Information | IRFB4610PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 73A |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 44A, 10V |
Input Capacitance (Ciss) @ Vds | 3550pF @ 50V |
Power - Max | 190W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 140nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB4610PBF IRFB4610PBF |