IRFB4610

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 140nC @ 10V
Power - Max: 190W
Current - Continuous Drain (Id) @ 25° C: 73A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds: 3550pF @ 50V


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits


Specifications

Symbol	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	73	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	52	A
IDM	Pulsed Drain Current	290	A
PD @TC = 25°C	Maximum Power Dissipation	190	W
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	± 20	V
dV/dt	Peak Diode Recovery	7.6	V/ns
TJ TSTG	Operating Junction and °C Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds (1.6mm from case)	300	°C
	Mounting torque, 6-32 or M3 screw	10lb`in (1.1N`m)