MOSFET MOSFT 250V 60A 33mOhm 99nC Qg
IRFB4332PBF: MOSFET MOSFT 250V 60A 33mOhm 99nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 33 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
VGS | Gate-to-Source Voltage | ±30 | V |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 60 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 42 | |
IDM | Pulsed Drain Current | 230 | |
IRP @ TC =100 | Repetitive Peak Current | 120 | |
PD @ TC = 25 | Power Dissipation | 390 | W |
PD @ TC = 25 | Power Dissipation | 200 | |
Linear Derating Factor | 2.6 | W/ | |
TJ TSTG |
Operating Junction Storage Temperature Range |
-40 to 175 | |
Soldering Temperature, for 10 seconds | 300 | ||
Mounting Torque, 6-32 or M3 Screw | 10lb`in (1.1N`m)) | N |
Technical/Catalog Information | IRFB4332PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 35A, 10V |
Input Capacitance (Ciss) @ Vds | 5860pF @ 25V |
Power - Max | 390W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 150nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB4332PBF IRFB4332PBF |