MOSFET MOSFT 100V 127A 6mOhm 120nC Qg
IRFB4310ZPBF: MOSFET MOSFT 100V 127A 6mOhm 120nC Qg
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 127 A |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Symbol | Parameter | Max. | Units |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 127 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 90 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
IDM | Pulsed Drain Current | 560 | |
PD @TC = 25°C | Maximum Power Dissipation | 250 | W |
Linear Derating Factor | 1.7 | W/°C | |
VGS | Gate-to-Source Voltage | ± 20 | V |
dv/dt | Peak Diode Recovery | 18 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
Mounting torque, 6-32 or M3 screw | 10lb in (1.1Nm) |
Technical/Catalog Information | IRFB4310ZPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 75A, 10V |
Input Capacitance (Ciss) @ Vds | 6860pF @ 50V |
Power - Max | 250W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Package / Case | TO-220AB |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB4310ZPBF IRFB4310ZPBF |