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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 42.6 A | ||
Resistance Drain-Source RDS (on) : | 55 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 44 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 31 | |
IDM | Pulsed Drain Current | 180 | |
PD @TA = 25°C | Power Dissipation | 2.4 | W |
PD @TC = 25°C | Power Dissipation | 330 | W |
Linear Derating Factor | 2.2 | W/°C | |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 2.5 | V/ns |
TJ | Operating Junction and | -55 to + 175 | °C |
TSTG | Storage Temperature Range | ||
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Technical/Catalog Information | IRFB42N20DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 44A |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 26A, 10V |
Input Capacitance (Ciss) @ Vds | 3430pF @ 25V |
Power - Max | 2.4W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 140nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB42N20DPBF IRFB42N20DPBF |