MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
IRFB4227PBF: MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 65 A | ||
Resistance Drain-Source RDS (on) : | 24 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Max. |
Units | |
VGS | Gate-to-Source Voltage |
±30 |
V |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
65 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
46 | |
IDM | Pulsed Drain Current |
260 | |
IRP @ TC = 100°C | Repetitive Peak Current |
130 | |
PD @TC = 25°C | Power Dissipation |
330 |
W |
PD @TC = 100°C | Power Dissipation |
190 | |
Linear Derating Factor |
2.2 |
W/°C | |
TJ | Operating Junction and |
-40 to + 175 |
°C |
TSTG | Storage Temperature Range | ||
Soldering Temperature for 10 seconds |
300 | ||
Mounting Torque, 6-32 or M3 Screw |
10lb`in (1.1N`m) |
N |
Technical/Catalog Information | IRFB4227PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 65A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 46A, 10V |
Input Capacitance (Ciss) @ Vds | 4600pF @ 25V |
Power - Max | 330W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 98nC @ 10V |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB4227PBF IRFB4227PBF |