MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 115 A | ||
Resistance Drain-Source RDS (on) : | 9 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ VGS = 12V, TC = 25 ID @ VGS = 12V, TC = 100 IDM |
Continuous Drain Current VGS @ 10V Continuous Drain Current VGS @ 10V Pulsed Drain Current |
115 81 360 |
A |
PD @ TC = 25 | Max. Power Dissipation | 270 | W |
Linear Derating Factor | 1.8 | W/ | |
VGS IAR |
Gate-to-Source Voltage Avalanche Current |
±20 85 |
V A |
EAR dv/dt |
Repetitive Avalanche Energy Peak Diode Recovery dv/dt |
18 4.7 |
mJ V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to +175 |
|
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
Advanced HEXFET® Power MOSFETs IRFB4215PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Technical/Catalog Information | IRFB4215PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 115A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 54A, 10V |
Input Capacitance (Ciss) @ Vds | 4080pF @ 25V |
Power - Max | 270W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB4215PBF IRFB4215PBF |