IRFB4215PBF

MOSFET

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SeekIC No. : 00156721 Detail

IRFB4215PBF: MOSFET

floor Price/Ceiling Price

US $ .78~.78 / Piece | Get Latest Price
Part Number:
IRFB4215PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2320
  • Unit Price
  • $.78
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 115 A
Resistance Drain-Source RDS (on) : 9 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 9 mOhms
Continuous Drain Current : 115 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Optimized for SMPS Applications
` Lead-Free



Specifications

  Parameter Max. Units
ID @ VGS = 12V, TC = 25

ID @ VGS = 12V, TC = 100

IDM
Continuous Drain Current VGS @ 10V

Continuous Drain Current VGS @ 10V

Pulsed Drain Current
115

81

360
A
PD @ TC = 25 Max. Power Dissipation 270 W
  Linear Derating Factor 1.8 W/
VGS

IAR
Gate-to-Source Voltage

Avalanche Current
±20

85
V

A
EAR

dv/dt
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
18

4.7
mJ

V/ns
TJ

TSTG
Operating Junction

Storage Temperature Range
-55 to +175



  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Advanced HEXFET® Power MOSFETs IRFB4215PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.




Parameters:

Technical/Catalog InformationIRFB4215PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C115A
Rds On (Max) @ Id, Vgs9 mOhm @ 54A, 10V
Input Capacitance (Ciss) @ Vds 4080pF @ 25V
Power - Max270W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4215PBF
IRFB4215PBF



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