Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 18 A
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Features: • Key parameters optimized for Class-D audio amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for ruggedness
• Can deliver up to 150W per channel into4Ωload in half-bridge topologySpecifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-to-Source Voltage |
100 |
V |
| VGS |
Gate-to-Source Voltage |
± 20 |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
18 |
A |
| ID @ TC =100°C |
Continuous Drain Current, VGS @ 10V |
13 |
A |
| IDM |
Pulsed Drain Current |
57 |
A |
| PD @ TC = 25 |
Maximum Power Dissipation |
60 |
W |
| PD @ TC =100°C |
Maximum Power Dissipation |
30 |
W |
| |
Linear Derating Factor |
0.4 |
W |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Clamping Pressure |
300 |
N |
DescriptionThis Digital Audio MOSFET IRFB4212PbF is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET IRFB4212PbF are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Parameters: | Technical/Catalog Information | IRFB4212PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 72.5 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 50V |
| Power - Max | 60W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB4212PBF
IRFB4212PBF
|
IRFB4212PBF Data Sheet
