MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg
IRFB4110PBF: MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 180 A |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Technical/Catalog Information | IRFB4110PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Input Capacitance (Ciss) @ Vds | 9620pF @ 50V |
Power - Max | 370W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 210nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB4110PBF IRFB4110PBF |