IRFB3806PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 43 A


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits

Specifications

Symbol	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Current,VGS@ 10V	43	A
ID @ TC=100	Continuous Drain Current, VGS@ 10V	31
IDM	Pulsed Drain Current	170
PD @ TC = 25	Maximum Power Dissipation	71	W
	Linear Derating Factor	0.47	W/
VGS	Gate-to-Source Voltage	±20	V
dv/dt	Peak Diode Recovery	24	V/ns
	Operating Junction and Storage Temperature Range	-55 to +175
TJ TSTG	Soldering Temperature, for 10 seconds (1.6mm from case)	300
	Mounting torque, 6-32 or M3 screw	10lbin (1.1Nm)

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T_Jmax, starting  T_J= 25, L = 0.23mH
 R_G= 25Ω, I_AS= 25A, V_GS =10V. Part not recommended for use above this value.
I_SD 25A, di/dt 1580A/µs, V_DD V_(BR)DSS , T_J 175.

Parameters:

Technical/Catalog Information	IRFB3806PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	43A
Rds On (Max) @ Id, Vgs	15.8 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1150pF @ 50V
Power - Max	71W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFB3806PBF IRFB3806PBF