MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
IRFB3607PBF: MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 80 A |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Symbol |
Parameter |
Max. |
Units |
ID @TC = 25 |
Continuous Drain Current, VGS @ 10V |
80 |
A |
ID @,TC = 100 |
Continuous Drain Current, VGS @ 10V |
56 | |
IDM |
Pulsed Drain Current |
310 | |
PD @TC = 25 |
Maximum Power Dissipation |
140 |
W |
Linear Derating Factor |
0.96 |
W/ | |
VGS |
Gate-to-Source Voltage |
± 20 |
V |
dv/dt |
Peak Diode Recovery |
27 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
Mounting Torque, 6-32 or M3 screw |
10lb`in (1.1N` m) |
Technical/Catalog Information | IRFB3607PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 46A, 10V |
Input Capacitance (Ciss) @ Vds | 3070pF @ 50V |
Power - Max | 140W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 84nC @ 10V |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB3607PBF IRFB3607PBF |