IRFB3507

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 97A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 75V
Gate Charge (Qg) @ Vgs: 130nC @ 10V
Power - Max: 190W
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds: 3540pF @ 50V


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	97	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	69
IDM	Pulsed Drain Current 	390
PD @ TC = 25°C	Max. Power Dissipation	190	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds (1.6mm from case)	300
	Mounting torque, 6-32 or M3 screw	10lb in (1.1N m)