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IRFB33N15DPBF

MOSFET

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SeekIC No. : 00155928 Detail

IRFB33N15DPBF: MOSFET

IRFB33N15DPBF Data Sheet

floor Price/Ceiling Price

US $ .81~.81 / Piece | Get Latest Price
Part Number:
IRFB33N15DPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2140
  • Unit Price
  • $.81
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 56 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 30 V
Resistance Drain-Source RDS (on) : 56 m Ohms


Features:

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to Simplify Design,
    (See App. Note AN1001)
· Fully Characterized Avalanche Voltage and Current


Application

·High frequency DC-DC converters
·Lead-Free


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 33 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 24
IDM Pulsed Drain Current 130
PD @TA = 25 Power Dissipation 3.8 W
PD @TC = 25 Power Dissipation 170
  Linear Derating Factor 1.1 W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 4.4 V/ns
TJ Operating Junction and
 -55 to + 175  
TSTG Storage Temperature Range
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Parameters:

Technical/Catalog InformationIRFB33N15DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C33A
Rds On (Max) @ Id, Vgs56 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2020pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB33N15DPBF
IRFB33N15DPBF



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