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IRFB3306PBF

MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg

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SeekIC No. : 00147234 Detail

IRFB3306PBF: MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg

IRFB3306PBF Data Sheet

floor Price/Ceiling Price

US $ .85~1.93 / Piece | Get Latest Price
Part Number:
IRFB3306PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.93
  • $1.25
  • $.9
  • $.85
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 160 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 160 A


Features:

· Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
· Fully Characterized Capacitance and Avalanche SOA
· Enhanced body diode dV/dt and dI/dt Capability
· Lead-Free


Application

· High Efficiency Synchronous Rectification in SMPS
· Uninterruptible Power Supply
· High Speed Power Switching
· Hard Switched and High Frequency Circuits


Specifications

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
160
A
ID @ TC= 70 Continuous Drain Current, VGS @ 10V
110
IDM Pulsed Drain Current
620
PD @TC = 25 Power Dissipation
230
W
  Linear Derating Factor
1.5
W/
VGS Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery
14
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
(1.6mm from case)
300
  Mounting torque, 6-32 or M3 screw
10lb`in (1.1N`m)
  



Parameters:

Technical/Catalog InformationIRFB3306PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs4.2 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 4520pF @ 50V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB3306PBF
IRFB3306PBF



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