MOSFET N-CH 75V 180A TO-220AB
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Symbol |
Parameter |
Max. |
Units |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
180 |
A |
ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
130 | |
IDM | Pulsed Drain Current |
720 | |
PD @TC= 25 | Maximum Power Dissipation |
330 |
W
|
Linear Derating Factor |
2.2 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
dv/dt | Peak Diode Recovery |
5.8 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
Mounting torqe, 6-32 or M3 screw | 10lb in (1.1N m) |
Technical/Catalog Information | IRFB3207 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 180A |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Input Capacitance (Ciss) @ Vds | 7600pF @ 50V |
Power - Max | 330W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 260nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFB3207 IRFB3207 |