IRFB3077PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 210 A


Features:



The above info is from (www.seekic.com)


Application

*High Efficiency Synchronous Rectification in SMPS
*Uninterruptible Power Supply
*High Speed Power Switching
*Hard Switched and High Frequency Circuits


Specifications

Symbol	Parameter	Max.	Unit
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	210	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	150
IDM	Pulsed Drain Current	850
PD @TC = 25	Maximum Power Dissipation	370	W
	Linear Derating Factor	2.5	W/
VGS	Gate-to-Source Voltage	±20	V
dV/dt	Peak Diode Recovery	2.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds (1.6mm from case)	300
	Mounting torque, 6-32 or M3 screw	10lb in (1.1N m)

Edited by (www.seekic.com) ,the biggest IC PDF and datasheet download site.


Description

 IRFB3077PbF

The above info is from (www.seekic.com)


Parameters:

Technical/Catalog Information	IRFB3077PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	9400pF @ 50V
Power - Max	370W
Packaging	Tube
Gate Charge (Qg) @ Vgs	220nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFB3077PBF IRFB3077PBF