MOSFET MOSFT 200V 56A 40mOhm 150nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 56 A | ||
Resistance Drain-Source RDS (on) : | 40 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 56 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 40 | |
IDM | Pulsed Drain Current | 220 | |
PD @TC = 25°C | Power Dissipation | 380 | W |
Linear Derating Factor | 2.5 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
dv/dt | Peak Diode Recovery dv/dt | 10 | V/ns |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N?m) |
Technical/Catalog Information | IRFB260NPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 56A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 34A, 10V |
Input Capacitance (Ciss) @ Vds | 4220pF @ 25V |
Power - Max | 380W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 220nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFB260NPBF IRFB260NPBF |