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IRFB23N15DPBF

MOSFET MOSFT 150V 23A 90mOhm 37nC

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SeekIC No. : 00149101 Detail

IRFB23N15DPBF: MOSFET MOSFT 150V 23A 90mOhm 37nC

IRFB23N15DPBF Data Sheet

floor Price/Ceiling Price

US $ .86~1.97 / Piece | Get Latest Price
Part Number:
IRFB23N15DPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.97
  • $1.27
  • $.92
  • $.86
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 23 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 23 A


Features:

·Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
· Fully Characterized Avalanche Voltage and Current


Application

·High frequency DC-DC converters
·Lead-Free


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 23 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 17
IDM Pulsed Drain Current 92
PD @TA = 25 Power Dissipation 3.8 W
PD @TC = 25 Power Dissipation 136
  Linear Derating Factor 0.9 W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 4.1 V/ns
TJ Operating Junction and -55 to + 175  
TSTG Storage Temperature Range
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)  



Parameters:

Technical/Catalog InformationIRFB23N15DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs90 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB23N15DPBF
IRFB23N15DPBF



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