IRFB18N50KPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.29 Ohm at 10 V


Application

· Switch Mode Power Supply (SMPS)
· Uninterruptible Power Supply
· High Speed Power Switching
· Hard Switched and High Frequency Circuits
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS @ 10V	17	A
ID @TC = 100	Continuous Drain Current VGS @ 10V	11
IDM	Pulsed Drain Current	68
PD @ TC = 25	Power Dissipation	220	W
	Linear Derating Factor	1.8	W/
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt 	7.8	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 seconds (1.6mm from case )	300
	Mounting Torque, 6-32 or M3 screw	10	N