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IRFB17N60K

MOSFET N-Chan 600V 17 Amp

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SeekIC No. : 00164637 Detail

IRFB17N60K: MOSFET N-Chan 600V 17 Amp

IRFB17N60K Data Sheet

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Part Number:
IRFB17N60K
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.42 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.42 Ohms
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 17 A


Application

 Switch Mode Power Supply (SMPS)
 Uninterruptible Power Supply
 High Speed Power Switching
 Hard Switched and High Frequency Circuits


Specifications
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
11
IDM
Pulsed Drain Current Å
68
PD @TA = 25°C
Power Dissipation á
280
W
PD @TC = 25°C
Power Dissipation
2.7
Linear Derating Factor
+30
W/°C
VGS
Gate-to-Source Voltage
8.0
V
TSTG
Peak Diode Recovery dv/dt É
-55 to + 150
V/ns
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
°C
Mounting torqe, 6-32 or M3 screwÜ
10



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