MOSFET N-Chan 500V 16 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 16 A | ||
Resistance Drain-Source RDS (on) : | 0.32 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
16 |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
11 |
|
IDM |
Pulsed Drain Current |
64 |
|
PD @TC = 25°C |
Power Dissipation |
220 |
|
Linear Derating Factor |
1.8 |
||
VGS |
Gate-to-Source Voltage |
± 30 |
|
dv/dt |
Peak Diode Recovery dv/dt |
13 |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
Soldering Temperature, for 10 seconds (1.6mm from case ) |
300 |
||
Mounting Torque, 6-32 or M3 screw |
10 |