IRFB17N20DPbF

MOSFET N-CH 200V 16A TO-220AB

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SeekIC No. : 004376947 Detail

IRFB17N20DPbF: MOSFET N-CH 200V 16A TO-220AB

floor Price/Ceiling Price

US $ .58~1.01 / Piece | Get Latest Price
Part Number:
IRFB17N20DPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
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  • 10~100
  • 100~250
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  • Unit Price
  • $1.01
  • $.78
  • $.73
  • $.69
  • $.66
  • $.63
  • $.58
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to
    Simplify Design, (See App. Note AN1001)
·Fully Characterized Avalanche Voltage and Current



Application

·High frequency DC-DC converters
·Lead-Free



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 16 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 64
PD @TA = 25 Power Dissipation 3.8 W
PD @TC = 25 Power Dissipation 140
  Linear Derating Factor 0.90 W/
VG Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 2.7 V/ns
TJ Operating Junction and -55 to + 175  
TSTG Storage Temperature Range
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)  



Parameters:

Technical/Catalog InformationIRFB17N20DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs170 mOhm @ 9.8A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB17N20DPBF
IRFB17N20DPBF



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