IRFB17N20D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 16A
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) @ Vds: 1100pF @ 25V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V


Application

High frequency DC-DC converters




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	16	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	14
IDM	Pulsed Drain Current Å	64
PD @TA = 25°C	Power Dissipation á	140	W
PD @TC = 25°C	Power Dissipation	0.90
	Linear Derating Factor	+30	W/°C
VGS	Gate-to-Source Voltage	2.7	V
TSTG	Peak Diode Recovery dv/dt É	-55 to + 175	V/ns
	Storage Temperature Range
TJ	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Mounting torqe, 6-32 or M3 screwÜ	10 lbf•in (1.1N•m)	N