IRFB16N60L

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.46 Ohms
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V


Description

The features of IRFB16N60L are: (1)superfast body diode eliminateds the need for external diodes in ZVS applicantions; (2)lower gate charge results in simpler drive requirements; (3)enhanced dv/dt capabilities offer improved ruggedness; (4)higher gate voltage threshold offers improved noise immunity.

The following is about the absolute maximum ratings of IRFB16N60L: (1)continuous drain current, VGS @ 10V: 16A; (2)continuous drain current, VGS @ 10V: 10A; (3)drain current-pulse: 60A; (4)power dissipation: 310W; (5)linear derating factor: 2.5W/; (6)operating junction and storage temperature range: -55 to +150.

The electrical characteristics of the IRFB16N60L are: (1)drain-source breakdown voltage: 600V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.39V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 385m typ and 460m max at VGS=10V, ID=9.0A; (4)gate thresholad voltage: 3.0V min and 5.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=30V; (6)gate-source reverse leakage: -100nA max at VGS=-30V; (7)drain-source leakage current: 50A min at VDS=600V, VGS=0V.