IRFB16N50K

MOSFET N-Chan 500V 17 Amp

product image

IRFB16N50K Picture
SeekIC No. : 00164504 Detail

IRFB16N50K: MOSFET N-Chan 500V 17 Amp

floor Price/Ceiling Price

Part Number:
IRFB16N50K
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.35 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.35 Ohms


Application

Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
 Hard Switched and High Frequency Circuits



Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
11
IDM
Pulsed Drain Current Å
68
PD @TA = 25°C
Power Dissipation á
280
W
PD @TC = 25°C
Power Dissipation
2.3
Linear Derating Factor
+30
W/°C
VGS
Gate-to-Source Voltage
8.0
V
TSTG
Peak Diode Recovery dv/dt É
-55 to + 150
V/ns
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
°C
Mounting torqe, 6-32 or M3 screwÜ
10 lbfin (1.1Nm)



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Integrated Circuits (ICs)
Potentiometers, Variable Resistors
Boxes, Enclosures, Racks
LED Products
Computers, Office - Components, Accessories
Static Control, ESD, Clean Room Products
View more