MOSFET N-Chan 500V 17 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 17 A | ||
Resistance Drain-Source RDS (on) : | 0.35 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Max. |
Units |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
17 |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
11 |
|
IDM |
Pulsed Drain Current Å |
68 |
|
PD @TA = 25°C |
Power Dissipation á |
280 |
W |
PD @TC = 25°C |
Power Dissipation |
2.3 |
|
Linear Derating Factor |
+30 |
W/°C |
|
VGS |
Gate-to-Source Voltage |
8.0 |
V |
TSTG |
Peak Diode Recovery dv/dt É |
-55 to + 150 |
V/ns |
Storage Temperature Range |
|||
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
°C |
|
Mounting torqe, 6-32 or M3 screwÜ |
10 lbfin (1.1Nm) |