IRF8915PBF

MOSFET

product image

IRF8915PBF Picture
SeekIC No. : 00155685 Detail

IRF8915PBF: MOSFET

floor Price/Ceiling Price

US $ .18~.2 / Piece | Get Latest Price
Part Number:
IRF8915PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2700
  • 2700~4000
  • Unit Price
  • $.2
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 8.9 A
Resistance Drain-Source RDS (on) : 27 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Resistance Drain-Source RDS (on) : 27 mOhms
Continuous Drain Current : 8.9 A


Application

Dual SO-8 MOSFET for POL converters in desktop, servers,graphics cards, game consoles and set-top box
·Lead-Free



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Max.
Units
VDS Drain-to-Source Voltage
20
V
VGS Gate-to-Source Voltage
±20
V
ID @ TA = 25 Continuous Drain Current,VGS @ 10V
8.9
A
ID @ TA = 70 Continuous Drain Current,VGS @ 10V
7.1
IDM Pulsed Drain Current
71
PD @TA = 25 Power Dissipation
2.0
W
PD @TA = 70 Power Dissipation
1.3
W
  Linear Derating Factor
0.016
W/
TJ, TSTG Operating Junction and
Storage Temperature Range
-55 TO +150



Parameters:

Technical/Catalog InformationIRF8915PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C8.9A
Rds On (Max) @ Id, Vgs18.3 mOhm @ 8.9A, 10V
Input Capacitance (Ciss) @ Vds 540pF @ 10V
Power - Max2W
PackagingTube
Gate Charge (Qg) @ Vgs7.4nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF8915PBF
IRF8915PBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Semiconductor Modules
Batteries, Chargers, Holders
Cables, Wires - Management
Audio Products
Crystals and Oscillators
View more