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IRF8010PBF

MOSFET MOSFT 100V 80A 15mOhm 81nC

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SeekIC No. : 00147060 Detail

IRF8010PBF: MOSFET MOSFT 100V 80A 15mOhm 81nC

IRF8010PBF Data Sheet

floor Price/Ceiling Price

US $ 1~2.27 / Piece | Get Latest Price
Part Number:
IRF8010PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.27
  • $1.47
  • $1.07
  • $1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 80 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Gate-Source Breakdown Voltage : 20 V


Features:

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
· Fully Characterized Avalanche Voltage and Current
· Typical RDS(on) = 12mΩ


Application

· High frequency DC-DC converters
· UPS and Motor Control
· Lead-Free


Specifications

Symbol Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 80 V
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 57 V
IDM Pulsed Drain Current 320 A
PD @TC = 25 Power Dissipation 1.8 A
  Linear Derating Factor ± 20 A
VGS Gate-to-Source Voltage 16 W
dv/dt Peak Diode Recovery dv/dt -55 to + 150 W
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 300 (1.6mm from case ) mW/
  Soldering Temperature, for 10 seconds  
  Mounting torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in)



Parameters:

Technical/Catalog InformationIRF8010PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs15 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds 3830pF @ 25V
Power - Max260W
PackagingBulk
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF8010PBF
IRF8010PBF



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