IRF8010

The features of IRF8010 are: (1)low gate-to-drain charge to reduce switching losses; (2)fully characterized capacitance including effective COSS to simplify design; (3)fully characterized avalanche voltage and current; (4)typical RDS(on)=12m.

The following is about the absolute maximum ratings of IRF8010: (1)continuous drain current, VGS @ 10V: 80A; (2)continuous drain current, VGS @ 10V: 57A; (3)pulsed drain current: 320A; (4)power dissipation: 260W; (5)linear derating factor: 1.8W/; (6)gate-to-cource voltage: ±20V; (7)peak diode recovery dv/dt: 16V/ns; (8)operating junction and storage temperature range: -55 to +150; (9)soldering temperature, for 10 seconds: 300 ; (10)mounting torque, 6-32 or M3 screw: 1.1(10) N`m.

The electrical characteristics of the IRF8010 are: (1)drain-source breakdown voltage: 100V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.11V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 12m typ and 15m max at VGS=10V, ID=45A; (4)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 200nA max at VGS=20V; (6)gate-source reverse leakage: -200nA max at VGS=-20V; (7)drain-source leakage current: 20A min at VDS=100V, VGS=0.