IRF8714PBF

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 13 mOhms
Continuous Drain Current : 14 A


Application

· Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
· Control MOSFET for Isolated DC-DC Converters in Networking Systems


Pinout




Specifications

	Parameter	Max.	Unit
VDS	Drain- Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TC= 25	Continuous Drain Current, VGS @ 10V	14	A
ID @ TC= 70	Continuous Drain Current, VGS @ 10V	11	A
IDM	Pulsed Drain Current	110	A
PD @TC= 25	Power Dissipation	2.5	W
PD @TC= 70	Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/
TJ,TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

The IRF8714PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.

Parameters:

Technical/Catalog Information	IRF8714PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	8.7 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	1020pF @ 15V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF8714PBF IRF8714PBF