IRF840PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.85 Ohms


Description

The features of IRF840PBF are: (1)typical RDS(on)=0.74; (2)avalanche rugged technology; (3)100% avalanche tested; (4)repetitive avalanche data at 100.

The following is about the absolute maximum ratings of IRF840PBF: (1)drain-source voltage: 500V; (2)drain-gate voltage: 500V; (3)gate-source voltage: ±20V; (4)continuous drain current at TC=25: 8A; (5)continuous drain current at TC=100: 5.1A; (6)drain current-pulse: 32A; (7)total dissipation @ TC=25: 125W; (8)derating factor: 1W/; (9)storage temperature: -65 to +150; (10)max. operating junction temperature: 150.

The electrical characteristics of the IRF840PBF are: (1)drain-source breakdown voltage: 500V min at ID=250A, VGS=0V; (2)zero gate voltage drain current(VGS=0): 250A at VDS=max rating; (3)gate-body leakage current(VDS=0): ±100nA max at VGS=±20V; (4)gate thresholad voltage: 2V min and 4V max at VDS=VGS, ID=250A; (5)static drain-source on resistance: 0.74 typ and 0.85 max at VGS=10V, ID=1.5A; (6)on-state drain current: 8A min.