IRF840LCPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.85 Ohms


Description

The IRF840LCPbF is designed as low change HEXFET which achieves significantly lower gate change over conventional MOSFET. Utilizing the new LCDMOS technology, the device iprovements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications.

IRF840LCPbF has seven features. (1)Ultra low gate charge. (2)Reduced gate drive requirement. (3)Enhanced 30V Vgs rating. (4)Reduced Ciss, Coss, Crss. (5)Extremely high frequency operation. (6)Repetitive avalanche rated. (7)Lead-free. That are all the main features.

Some absolute maximum ratings IRF840LCPbF have been concluded as follow. (1)Its continuous drain current Vgs at -10V would be 8.0A at 25°C and would be 5.1A at 100°C. (2)Its pulsed drain current would be 28A. (3)Its power dissipation would be 125W at Tc=25°C. (4)Its linear derating factor would be 1.0W/°C. (5)Its gate to source voltage would be +/-30V. (6)Its single pulse avalanche energy would be 510mJ. (7)Its peak diode recovery dv/dt would be 3.5V/ns. (8)Its avalanche current would be 8.0A. (9)Its repetitive avalanche energy would be 13mJ. (10)Its operating junction and storage temperature range would be from -55°C to +150°C. (11)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics IRF840LCPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 500V. (2)Its breakdown voltage temperature coefficient would be typ 0.63V/°C. (3)Its static brain to source on-resistance would be max 0.85. (4)Its gate threshold voltage would be min 2.0V and max 4.0V. (5)Its forward transconductance would be min 4.0S. (6)Its total gate charge would be max 39nC. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!