MOSFET N-Chan 500V 8.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 0.85 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 8.0 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 5.1 | |
IDM | Pulsed Drain Current | 28 | |
PD @ TA = 25 | Power Dissipation | 3.1 | W |
PD @ TC = 25 | Power Dissipation | 125 | W |
Linear Derating Factor | 1.0 |
W/ | |
VGS | Gate-to-Source Voltage | ± 30 | V |
EAS | Single Pulse Avalanche Energy | 510 | mJ |
IAR | Avalanche Curren t | 8.0 | A |
EAR | Repetitive Avalanche Energy | 13 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
This new series of low charge HEXFET® IRF840LCL power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.
These device IRF840LCL improvements combined with the proven ruggedness and reliability that characterize of HEXFET power MOSFETs offer the designer a new power transistor standard for switching applications.