MOSFET N-Chan 500V 8.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 850 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Symbol | Rating | Unit |
Continuous Drain Current, VGS @ -10V,Tc = 25 | ID | 8.0 | A |
Continuous Drain Current, VGS @ -10V,Tc = 100 | ID | 5.1 | A |
Pulsed Drain Current*1 | IDM | 32 | A |
Power Dissipation Tc = 25 | PD | 125 | W |
Linear Derating Factor | 1.0 | /W | |
Gate-to-Source Voltage | VGS | ±30 | V |
Peak Diode Recovery dv/dt *2 | dv/dt | 5.0 | V/ns |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 srew | 10 lbf.in (1.1N.m) |