MOSFET N-Chan 500V 8.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 0.85 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter |
Maximum |
Units | |
ID @ TC=25 |
Continuous Drain Current,VGS @-10V |
8.0 |
A |
ID @ TC=100 |
Continuous Drain Current,VGS @-10V |
5.1 | |
IDM |
Pulsed Drain Current |
32 | |
PD@ TC= 25 |
Power Dissipation |
125 |
W |
PD@ TA= 25 |
3.1 | ||
Linear Derating Factor |
1.0 |
W/ | |
VGS |
Gate-to-Source Voltage |
±30 |
V |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
Tj,TSTG |
Operating Junction and Storage Temperature Range |
-55 to 150 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |