IRF840A, US $ 1.79-1.91 , Vishay/Siliconix, IRF840A DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158713 Detail

IRF840A: MOSFET N-Chan 500V 8.0 Amp

IRF840A Data Sheet

US $ 1.79~1.91 / Piece | Get Latest Price

Part Number:: IRF840A
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~725
725~1000
1000~2000

Unit Price
$1.91
$1.84
$1.79

Processing time
15 Days
15 Days
15 Days

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	8 A
Resistance Drain-Source RDS (on) :	0.85 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 30 V
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.85 Ohms

Features:

·Low Gate Charge Qg results in Simple Drive Requirement
·Improved Gate, Avalanche and dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective Coss Specified (See AN1001)

Application

·Switch Mode Power Supply ( SMPS
·Uninterruptable Power Supply
·High speed power switching

Specifications

	Parameter	Max.	Units
I_D @ T_C = 25	Continuous Drain Current, VGS @ 10V	8.0	A
I_D @ T_C = 100	Continuous Drain Current, VGS @ 10V	5.1
I_DM	Pulsed Drain Current	32
P_D@ T_C = 25	Power Dissipation	125	W
	Linear Derating Factor	1.0	W/
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)

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IRF840A

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