Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 500 V
Continuous Drain Current
: 8 A
Resistance Drain-Source RDS (on)
: 0.85 Ohms
Features: `Drain Current ID=8.0A@ TC=25
`Drain Source Voltage- : VDSS= 500V(Min)
`Static Drain-Source On-Resistance : RDS(on) = 0.85(Max)Specifications
| SYMBOL |
PARAMETER |
VALUE |
UNIT |
| VDSS |
Drain-Source Voltage |
500 |
V |
| VGS |
Gate-Source Voltage-Continuous |
±20 |
V |
| ID |
Drain Current-Continuous |
8 |
V |
| IDM |
Drain Current-Single Plused |
32 |
A |
| PD |
Total Dissipation @TC=25 |
125 |
W |
| Tj |
Max. Operating Junction Temperature |
150 |
|
| Tstg |
Storage Temperature |
-55~150 |
|
DescriptionDesigned for high voltage, high speed switching power applic-ations such as switching regulators, converters, solenoid and relay drivers of the IRF840.
Parameters: | Technical/Catalog Information | IRF840 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 3.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 832pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF840
IRF840
497 2731 5 ND
49727315ND
497-2731-5
|
IRF840 Data Sheet
