MOSFET N-Chan 500V 5.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5 A | ||
Resistance Drain-Source RDS (on) : | 1.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Unit | ||
ID @ VGS = 10V,TC = 25 | Continuous Drain Current |
5.0 |
A |
ID @ VGS = 10V,TC = 100 | Continuous Drain Current |
3.2 |
A |
IDM | Pulsed Drain Current |
20 |
A |
PD @ TC = 25 | Max. Power Dissipation |
74 |
W |
Linear Derating Factor |
2.59 |
W/ | |
VGS | Gate-to-Source Voltage |
±30 |
V |
dv/dt | Peak Diode Recovery dv/dt |
5.3 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Pckg. Mounting Surface Temp. |
300 (1.6mm from case ) |
||
Weight |
10 lbf`in (1.1N`m) |
g |