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IRF830AL

MOSFET N-Chan 500V 5.0 Amp

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SeekIC No. : 00165274 Detail

IRF830AL: MOSFET N-Chan 500V 5.0 Amp

IRF830AL Data Sheet

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Part Number:
IRF830AL
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 5 A
Package / Case : TO-262


Features:

·Low Gate Charge Qg Results in Simple Drive Requirement
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective Coss specified (See AN 1001)


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High Speed Power Switching


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 5.0 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 3.2
IDM Pulsed Drain Current 20
PD @ TA= 25 Power Dissipation 3.1 W
ID @ TC = 100 Power Dissipation 74  
  Linear Derating Factor 0.59
 W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
TJ
 Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 secondss		 300 (1.6mm from case )



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