MOSFET N-Chan 500V 4.5 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.5 A | ||
Resistance Drain-Source RDS (on) : | 1.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 2 | Continuous Drain Current, VGS @ 10V | 2.5 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 1.6 | |
IDM | Pulsed Drain Current (1) | 10 | |
PD @TC = 25 | Power Dissipation | 50 | W |
Linear Derating Factor | 0.4 |
W/ | |
Linear Derating Factor ( PCB Mount, D2 ) (1) | 0.025 | ||
VGS | Gate-to-Source Voltage | ± 30 | V |
EAS | Single Pulse Avalanche Energy (2) | 280 | mJ |
IAR | Avalanche Current (1) | 4.5 | A |
EAR | Repetitive Avalanche Energy (1) | 7.4 | mJ |
dv/dt | Peak Diode Recovery dv/dt (3) | 3.4 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRF830 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 4.5A |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2.7A, 10V |
Input Capacitance (Ciss) @ Vds | 610pF @ 25V |
Power - Max | 100W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 30nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF830 IRF830 497 2732 5 ND 49727325ND 497-2732-5 |