MOSFET N-Chan 500V 2.5 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2.5 A | ||
Resistance Drain-Source RDS (on) : | 3 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter | Max. | Units | |
VGS |
Linear Derating Factor Gate-to-Source Voltage |
0.4 ±30 |
W/ V |
ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
2.5 1.6 10 |
A |
dv/dt | Peak Diode Recovery dv/dt | 3.4 | V/ns |
PD @ TC = 25 |
Power Dissipation |
50 |
W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw |
300 (1.6mm from case ) 10 lbf•in (1.1N•m) |