IRF820

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 3 Ohms


Description

The features of IRF820 are: (1)high current, high sped switching; (2)switch mode power supplies; (3)chopper regulators, converters, motor control, lighting for industrial and consumer environment.

The following is about the absolute maximum ratings of IRF820: (1)drain-source voltage: 500V; (2)drain-gate voltage: 500V; (3)gate-source voltage: ±20V; (4)continuous drain current at TC=25: 3A; (5)continuous drain current at TC=100: 1.9A; (6)drain current-pulse: 12A; (7)total dissipation @ TC=25: 75W; (8)derating factor: 0.6W/; (9)storage temperature: -65 to +150; (10)max. operating junction temperature: 150.

The electrical characteristics of the IRF820 are: (1)drain-source breakdown voltage: 500V min at ID=250A, VGS=0V; (2)zero gate voltage drain current(VGS=0): 250A at VDS=max rating; (3)gate-body leakage current(VDS=0): ±100nA max at VGS=±20V; (4)gate thresholad voltage: 2V min and 4V max at VDS=VGS, ID=250A; (5)static drain-source on resistance: 2.5 typ and 3.0 max at VGS=10V, ID=1.5A; (6)on-state drain current: 3A min.

Parameters:

Technical/Catalog Information	IRF820
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	3 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	315pF @ 25V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF820 IRF820 497 2733 5 ND 49727335ND 497-2733-5