IRF8113PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 7.4 mOhms
Continuous Drain Current : 16.6 A


Application

· Synchronous MOSFET for Notebook Processor Power
· Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems


Specifications

	Parameter	Max.	Units
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	17.2	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	13.8
IDM	Pulsed Drain Current	135
PD @TA = 25	Power Dissipation	2.5	W
PD @TA = 70	Power Dissipation	1.6
	Linear Derating Factor	0.02	W/
VDS	Drain-Source Voltage	30	V
VGS	Diode Maximum Forward Current	±20	V
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF8113PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	17.2A
Rds On (Max) @ Id, Vgs	5.6 mOhm @ 17.2A, 10V
Input Capacitance (Ciss) @ Vds	2910pF @ 15V
Power - Max	2.5W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	36nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF8113PBF IRF8113PBF